Memristive technologies for data storage, computation, encryption, and radio-frequency communication

M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang… - Science, 2022 - science.org
Memristive devices, which combine a resistor with memory functions such that voltage
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …

Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators

AS Lele, B Zhang, WS Khwa, MF Chang - Nano Letters, 2025 - ACS Publications
Unprecedented penetration of artificial intelligence (AI) algorithms has brought about rapid
innovations in electronic hardware, including new memory devices. Nonvolatile memory …

Random bitstream generation using voltage-controlled magnetic anisotropy and spin orbit torque magnetic tunnel junctions

S Liu, J Kwon, PW Bessler, SG Cardwell… - IEEE Journal on …, 2022 - ieeexplore.ieee.org
Probabilistic computing using random number generators (RNGs) can leverage the inherent
stochasticity of nanodevices for system-level benefits. Device candidates for this application …

In-memory computing for machine learning and deep learning

N Lepri, A Glukhov, L Cattaneo… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

C Jiang, J Li, H Zhang, S Lu, P Li, C Wang… - Journal of …, 2023 - iopscience.iop.org
We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …

Spin-transfer-torque MRAM: the next revolution in memory

DC Worledge - 2022 IEEE international memory workshop …, 2022 - ieeexplore.ieee.org
This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive
Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …

Picosecond spin-orbit torque–induced coherent magnetization switching in a ferromagnet

D Polley, A Pattabi, A Rastogi, K Jhuria, E Diaz… - Science …, 2023 - science.org
Electrically controllable nonvolatile magnetic memories show great potential for the
replacement of conventional semiconductor-based memory technologies. Here, we …

Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing

Z **ao, VB Naik, JH Lim, Y Hou, Z Wang, Q Shao - Science Advances, 2024 - science.org
Memristors have emerged as promising devices for enabling efficient multiply-accumulate
(MAC) operations in crossbar arrays, crucial for analog in-memory computing (AiMC) …

[HTML][HTML] Roadmap on low-power electronics

R Ramesh, S Salahuddin, S Datta, CH Diaz… - APL Materials, 2024 - pubs.aip.org
This article is written on behalf of many colleagues, collaborators, and researchers in the
field of advanced materials who continue to enable and undertake cutting-edge research in …

Experimental demonstration of magnetic tunnel junction-based computational random-access memory

Y Lv, BR Zink, RP Bloom, H Cılasun, P Khanal… - npj Unconventional …, 2024 - nature.com
The conventional computing paradigm struggles to fulfill the rapidly growing demands from
emerging applications, especially those for machine intelligence because much of the …