Metal silicides and their nanostructures have been found to be suitable candidates for
device manufacturing in contemporary microelectronics industries to reduce contact …

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In
the microelectronics industry, silicides are the material of choice for contacting silicon based …

In this paper, the in-situ Scanning Electron Microscopy (in-situ SEM) technique and three-
dimensional (3-D) phase-field simulation were combined to perform a comprehensive study …

Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt
Schottky nanojunctions are highly anticipated for the realization of emerging electronic …

The Ni monosilicide alloyed with Pt is widely used as contact material in advanced
microelectronics devices and a good knowledge of silicide formation kinetics is required for …

In this paper, we review some of the key challenges associated with the Ni silicidation
process in the most recent CMOS technologies. The introduction of new materials (eg SiGe) …

The impact of Pt or Co as alloying elements for Ni-based metallization of GeSn layers has
been investigated. As far as the solid-state reaction is concerned, the overall phase …

Silicide materials used as contacts in CMOS devices have evolved over many technology
nodes. This article traces the often forgotten defectivity related reasons that were the primary …

The melting curve of NiSi has been determined to 70 GPa on the basis of laser-heated
diamond anvil cell (LH-DAC) experiments in which changes in the gradient of temperature …

The redistribution of Pt after heat treatment at 290° C for 1h has been analyzed by large-
angle atom probe tomography assisted by femtosecond laser pulses. Two silicides Ni2Si …