Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

This article reviews several classes of inorganic semiconductor materials that can be used to
form high‐performance thin‐film transistors (TFTs) for large area, flexible electronics …

It is an object of the present invention to provide a technology of controlling a threshold
voltage of a thin film transistor in which an amorphous oxide film is applied to a channel …

Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for
the semiconductor industry. However, unavoidable defect generation during high …

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (⁠ a-
IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a …

The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

Metal-oxide thin-film transistors (TFT) fabricated by spray pyrolysis are of increasing interest
because of its simple process and scalability. A bottleneck issue is to get a bubble-free and …

Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room
temperature, in the crystalline form), which has many applications, such as for transparent …

High mobility, n-type transparent thin-film transistors (TTFTs) with a zinc indium oxide (ZIO)
channel layer are reported. Such devices are highly transparent with∼ 85% optical …

We fabricated high-performance ZnO thin-film transistors on gate dielectrics of HfO 2⁠,
HfSiO x⁠, and Al 2 O 3⁠, grown by atomic layer deposition (ALD). Devices on HfO 2 had a …