[HTML][HTML] Resistance random access memory
Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …
generation of electronic products. Therefore, the development of next-generation NVM is …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Multiscale co-design analysis of energy, latency, area, and accuracy of a ReRAM analog neural training accelerator
Neural networks are an increasingly attractive algorithm for natural language processing
and pattern recognition. Deep networks with> 50 M parameters are made possible by …
and pattern recognition. Deep networks with> 50 M parameters are made possible by …
To be or not to be–review of electrical bistability mechanisms in polymer memory devices
Organic memory devices are a rapidly evolving field with much improvement in device
performance, fabrication, and application. But the reports have been disparate in terms of …
performance, fabrication, and application. But the reports have been disparate in terms of …
Towards forming-free resistive switching in oxygen engineered HfO2− x
SU Sharath, T Bertaud, J Kurian, E Hildebrandt… - Applied physics …, 2014 - pubs.aip.org
We have investigated the resistive switching behavior in stoichiometric HfO 2 and oxygen-
deficient HfO 2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy …
deficient HfO 2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy …
Radiation effects in advanced and emerging nonvolatile memories
MJ Marinella - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical
direction and dominate the commercial nonvolatile memory market. However, several …
direction and dominate the commercial nonvolatile memory market. However, several …
[HTML][HTML] Enhancing the corrosion protection of Ti-6Al-4V alloy through reactive sputtering niobium oxide thin films
Here, a set of polycrystalline niobium oxide thin films were produced by using reactive
sputtering technique on the Ti-6Al-4V alloy surfaces and characterized by OM, SEM/EDX …
sputtering technique on the Ti-6Al-4V alloy surfaces and characterized by OM, SEM/EDX …
Memristor model optimization based on parameter extraction from device characterization data
C Yakopcic, TM Taha, DJ Mountain… - … on Computer-Aided …, 2019 - ieeexplore.ieee.org
This paper presents a memristive device model capable of accurately matching a wide
range of characterization data collected from a tantalum oxide memristor. Memristor models …
range of characterization data collected from a tantalum oxide memristor. Memristor models …
Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications
G Bersuker, DC Gilmer, D Veksler - Advances in Non-Volatile Memory and …, 2019 - Elsevier
Detailed operational and intrinsic switching characteristics for hafnia-based resistive random
access memory (RRAM) are presented, including materials/vacancy engineering …
access memory (RRAM) are presented, including materials/vacancy engineering …
Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance
Tantalum oxide has shown promising electrical switching characteristics for memristor
devices. Consequently, a number of reports have investigated the electrical behavior of TaO …
devices. Consequently, a number of reports have investigated the electrical behavior of TaO …