The integration density of state-of-the-art electronic systems is limited by the reliability of the
manufactured integrated circuits at a desired circuit density. Design rules, operating …

The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are
reviewed. The simulation tools and failure equivalent circuits are described. The review …

The target in the design of CMOS radio-frequency (RF) transceivers for wireless application
is the highest integration level, despite reliability issues of conventional submicron …

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc)
stress were evaluated experimentally. It showed that the degradation due to dynamic stress …

The effect of the MOSFET gate-oxide reliability on operational amplifier is investigated with
the two-stage and folded-cascode structures in a 130-nm low-voltage CMOS process. The …

This paper presents an investigation of the electromagnetic signature and the coupling
mechanism of quadcopter drones with incident electromagnetic (EM) wave and radar cross …

The RF front-end is a very vulnerable part of the coupling paths that are induced by a high
power electromagnetic (HPEM) pulse. Existing studies found through experiment or …

Highly efficient switch-mode class-E power amplifiers (PAs) are sensitive to load impedance
variations. For voltage standing wave ratios (VSWRs) up to 10: 1, the peak switch voltage …

Device parameters degradation of nonlinear elements subject to drain and gate voltage
stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect …

Both the degradations of dc and RF characteristics of nMOS transistors due to hot-carrier
effect and instantaneous high RF power stresses are presented in this paper. The drain …