Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …

We investigated the visible photon accelerated negative bias instability (NBI) in amorphous
In–Ga–Zn–O (a-IGZO) thin film transistor (TFT). As reported in previous works, the rigid shift …

The purpose of this paper is to give an overview of the state-of-the-art of metal oxide thin-film
transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is …

Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can
cause a large negative shift (> 7.1 V) in threshold voltage, something frequently attributed to …

Metal oxide optoelectronics is an emerging field that exploits the intriguing properties of the
ns orbital-derived isotropic band structure as a replacement for traditional silicon-based …

In this review, we discuss the recent developments of high-performance and improved-
stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin …

The flat panel display (FPD) market has been experiencing a rapid transition from liquid
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …

The excited holes occupying the valence band tail (VBT) states in amorphous oxide
semiconductors (AOS) are found to induce formation of meta‐stable \rmO_2^\rm2- peroxide …

Copper iodide (CuI) has emerged as a promising p-type semiconductor material owing to its
excellent carrier mobility, high transparency, and solution processability. Although CuI has …