1D semiconductor nanowires for energy conversion, harvesting and storage applications

M Nehra, N Dilbaghi, G Marrazza, A Kaushik… - Nano Energy, 2020 - Elsevier
The accomplishment of 1D semiconductor nanowires (SN) in the field of energy has
attracted intense interest in recent years due to their advantageous properties (eg, large …

Review on III–V semiconductor nanowire array infrared photodetectors

Z Li, Z He, C **, F Zhang, L Huang, Y Yu… - Advanced Materials …, 2023 - Wiley Online Library
In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires

D Wang, W Wu, S Fang, Y Kang, X Wang… - Light: Science & …, 2022 - nature.com
III–V semiconductor nanowires are indispensable building blocks for nanoscale electronic
and optoelectronic devices. However, solely relying on their intrinsic physical and material …

Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions

X Yuan, D Pan, Y Zhou, X Zhang, K Peng… - Applied Physics …, 2021 - pubs.aip.org
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Manipulating Intermediates at the Au–TiO2 Interface over InP Nanopillar Array for Photoelectrochemical CO2 Reduction

G Liu, PR Narangari, QT Trinh, W Tu, M Kraft… - ACS …, 2021 - ACS Publications
Photoelectrochemical (PEC) reduction of CO2 with H2O is a promising approach to convert
solar energy and greenhouse gas into value-added chemicals or fuels. However, the exact …

Ternary GePdS3: 1D van der Waals Nanowires for Integration of High-Performance Flexible Photodetectors

Y Zhang, X Yang, Y Dai, W Yu, L Yang, J Zhang, Q Yu… - ACS …, 2023 - ACS Publications
One-dimensional (1D) van der Waals (vdW) materials are anticipated to leverage for high-
performance, giant polarized, and hybrid-dimension photodetection owing to their dangling …

High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement

HW Jeong, SA Church, M Döblinger, A Ajay… - Nano Letters, 2024 - ACS Publications
Predicting the optical properties of large-scale ensembles of luminescent nanowire arrays
that host active quantum heterostructures is of paramount interest for on-chip integrated …

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Y Yin, Y Guo, D Liu, C Miao, F Liu… - Advanced Optical …, 2022 - Wiley Online Library
Large‐scale growth of high‐quality III–V nanowires (NWs) on an expected substrate is
challenging the next‐generation optoelectronic devices. In this work, high‐quality III–V NWs …

Surface nano-patterning for the bottom-up growth of III-V semiconductor nanowire ordered arrays

V Demontis, V Zannier, L Sorba, F Rossella - Nanomaterials, 2021 - mdpi.com
Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising
candidates for the realization of all-dielectric metamaterials, artificial electromagnetic …

[HTML][HTML] Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects

A Ajay, H Jeong, T Schreitmüller, M Döblinger… - Applied Physics …, 2022 - pubs.aip.org
We report the effects of antimony (Sb) surfactant on the growth and correlated structural and
optical properties of non-catalytic GaAs nanowires (NW) grown by selective area epitaxy on …