Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Van der Waals contact for two-dimensional transition metal dichalcogenides
L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …
promising candidates for next-generation electronics owing to their atomically thin structures …
Recent advances of transition metal sulfides/selenides cathodes for aqueous zinc‐ion batteries
H Shuai, R Liu, W Li, X Yang, H Lu… - Advanced Energy …, 2023 - Wiley Online Library
Rechargeable aqueous zinc‐ion batteries (ZIBs) have aroused tremendous attention in
energy storage system due to their high safety, eco‐friendliness, low cost, and for their good …
energy storage system due to their high safety, eco‐friendliness, low cost, and for their good …
Ultralow contact resistance between semimetal and monolayer semiconductors
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer
Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …
metal dichalcogenides provide an ideal material platform, but the device performances such …
Oxygen Driven Defect Engineering of Monolayer MoS2 for Tunable Electronic, Optoelectronic, and Electrochemical Devices
Abstract Molybdenum disulfide (MoS2), a two‐dimensional (2D) semiconducting material
harbors intrinsic defects that can be harnessed to achieve tuneable electronic …
harbors intrinsic defects that can be harnessed to achieve tuneable electronic …
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …
contact resistance of the metal–semiconductor interface at the source and drain electrodes …
Two-dimensional semiconductors and transistors for future integrated circuits
L Yin, R Cheng, J Ding, J Jiang, Y Hou, X Feng… - ACS …, 2024 - ACS Publications
Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …
A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices
HS Nalwa - RSC advances, 2020 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention
in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and …
in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and …
Ti1–graphene single-atom material for improved energy level alignment in perovskite solar cells
Carbon-based perovskite solar cells (C-PSCs) are widely accepted as stable, cost-effective
photovoltaics. However, C-PSCs have been suffering from relatively low power conversion …
photovoltaics. However, C-PSCs have been suffering from relatively low power conversion …
The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …
attracted considerable research interest in the context of their use in ultrascaled devices …