Van der Waals contact for two-dimensional transition metal dichalcogenides

L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

Recent advances of transition metal sulfides/selenides cathodes for aqueous zinc‐ion batteries

H Shuai, R Liu, W Li, X Yang, H Lu… - Advanced Energy …, 2023 - Wiley Online Library
Rechargeable aqueous zinc‐ion batteries (ZIBs) have aroused tremendous attention in
energy storage system due to their high safety, eco‐friendliness, low cost, and for their good …

Ultralow contact resistance between semimetal and monolayer semiconductors

PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park… - Nature, 2021 - nature.com
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

A Mondal, C Biswas, S Park, W Cha, SH Kang… - Nature …, 2024 - nature.com
Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …

Oxygen Driven Defect Engineering of Monolayer MoS2 for Tunable Electronic, Optoelectronic, and Electrochemical Devices

IH Abidi, SP Giridhar, JO Tollerud… - Advanced Functional …, 2024 - Wiley Online Library
Abstract Molybdenum disulfide (MoS2), a two‐dimensional (2D) semiconducting material
harbors intrinsic defects that can be harnessed to achieve tuneable electronic …

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Y Wang, JC Kim, RJ Wu, J Martinez, X Song, J Yang… - Nature, 2019 - nature.com
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Two-dimensional semiconductors and transistors for future integrated circuits

L Yin, R Cheng, J Ding, J Jiang, Y Hou, X Feng… - ACS …, 2024 - ACS Publications
Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …

A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices

HS Nalwa - RSC advances, 2020 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention
in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and …

Ti1–graphene single-atom material for improved energy level alignment in perovskite solar cells

C Zhang, S Liang, W Liu, FT Eickemeyer, X Cai… - Nature Energy, 2021 - nature.com
Carbon-based perovskite solar cells (C-PSCs) are widely accepted as stable, cost-effective
photovoltaics. However, C-PSCs have been suffering from relatively low power conversion …

The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms

Y Shen, Z Dong, Y Sun, H Guo, F Wu, X Li… - Advanced …, 2022 - Wiley Online Library
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …