Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …

Graphene and two-dimensional materials (2DM) remain an active field of research in
science and engineering over 15 years after the first reports of 2DM. The vast amount of …

The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices
because, compared to one-dimensional materials, it is relatively easy to fabricate complex …

In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …

Full-scale quantum computers require the integration of millions of qubits, and the potential
of using industrial semiconductor manufacturing to meet this need has driven the …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Aligned semiconducting carbon nanotubes are a potential alternative to silicon in the
creation of scaled field-effect transistors (FETs) due to their easy miniaturization and high …