The high-k materials are essential in thin-film transistors. A well-controlled thin film
deposition that produces less electronic defects induced by charged vacancies is highly …

In-memory computing is an attractive solution for reducing power consumption and memory
access latency cost by performing certain computations directly in memory without reading …

The wettability of metal oxides, which is directly related to the surface free energy (SFE), is
used in a wide range of robust functional coatings, from hydrophilic to hydrophobic. Because …

We claim that the evolution of conductive filaments (CF) in bipolar resistive switching (BRS)
and complementary resistive switching (CRS) is similar in HfO 2-based structures with one …

The paper describes an investigation of resistive switching in the Pt/HfO 2/HfO x N y/TiN,
Pt/HfO 2/TaO x N y/TiN, and Pt/Al 2 O 3/HfO 2/TaO x N y/TiN structures with oxide layers …

Silicon wafers with an ultrathin buried high-k oxide were fabricated by the atomic layer
deposition of high-k layers on sapphire and silicon substrates with subsequent silicon layer …

The formation of a multi-crystalline HfO 2 film, containing the ferroelectric phase OII (Pmn2 1)
after a high-temperature annealing at 1100° C, was experimentally observed by HREM for …

The reliability degradation of HfO 2-based devices under heavy ion irradiation is still an
open question. In this letter, the ultrathin amorphous HfO 2 gate stacks were irradiated by …

Results are presented that testify to an increase in the thermal stability and structural and
electrical properties of films obtained via plasma-stimulated atomic layer deposition …

A two-gate ferroelectric SOI transistor is proposed as the basic element for a content-
addressable memory which will ensure the transition from simple crossbar matrices to deep …