Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Graphene, one of the most promising two-dimensional materials, has great potential in
various applications, including nanoelectronics, optoelectronics, energy harvesting, and …

Pn junctions based on vertically stacked van der Waals (vdW) materials have attracted a
great deal of attention and may open up unforeseen opportunities in electronics and …

Photocurrent in photodetectors incorporating van der Waals materials is typically produced
by a combination of photocurrent generation mechanisms that occur simultaneously during …

Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high
photosensitivity due to their direct band gap transition. However, there is a lack of …

β‐In2S3 is a natural defective III–VI semiconductor attracting considerable interests but lack
of efficient method for its 2D form fabrication. Here, for the first time, this paper reports …

The integration of different two-dimensional materials within a multilayer van der Waals
(vdW) heterostructure offers a promising technology for high performance opto-electronic …

Flexible self-powered sensing is urgently needed for wearable, portable, sustainable,
maintenance-free and long-term applications. Here, we developed a flexible and self …

Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic
characteristics have attracted a lot of interest in fundamental research and manufacturing of …