Review of current progress in quantum dot infrared photodetectors
Quantum dot infrared photodetectors (QDIPs) have made significant progress after their
early demonstration about a decade ago. We review the progress made by QDIP technology …
early demonstration about a decade ago. We review the progress made by QDIP technology …
Electronic excitations in nanostructures: an empirical pseudopotential based approach
G Bester - Journal of Physics: Condensed Matter, 2008 - iopscience.iop.org
Physics at the nanoscale has emerged as a field where discoveries of fundamental physical
effects lead to a greater understanding of the solid state. Additionally, the field is believed to …
effects lead to a greater understanding of the solid state. Additionally, the field is believed to …
[LIBRO][B] Infrared and terahertz detectors
A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …
infrared and terahertz detector technology, from fundamental science to materials and …
Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems
AD Yoffe - Advances in physics, 2001 - Taylor & Francis
This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors
The band structures and effective masses of III-V semiconductors (InP, InAs, InSb, GaAs, and
GaSb) are calculated using the GW method, the Heyd, Scuseria, and Ernzerhof hybrid …
GaSb) are calculated using the GW method, the Heyd, Scuseria, and Ernzerhof hybrid …
Growth and properties of semiconductor core/shell nanocrystals with InAs cores
Cao, U Banin - Journal of the American Chemical Society, 2000 - ACS Publications
Core/shell semiconductor nanocrystals with InAs cores were synthesized and characterized.
III− V semiconductor shells (InP and GaAs), and II− VI semiconductor shells (CdSe, ZnSe …
III− V semiconductor shells (InP and GaAs), and II− VI semiconductor shells (CdSe, ZnSe …
Many-body pseudopotential theory of excitons in InP and CdSe quantum dots
We present a pseudopotential approach to the calculation of the excitonic spectrum of
semiconductor quantum dots. Starting from a many-body expansion of the exciton wave …
semiconductor quantum dots. Starting from a many-body expansion of the exciton wave …
Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
We adopt an atomistic pseudopotential description of the electronic structure of self-
assembled, lens-shaped InAs quantum dots within the “linear combination of bulk bands” …
assembled, lens-shaped InAs quantum dots within the “linear combination of bulk bands” …
Theory of the electronic structure of GaN/AlN hexagonal quantum dots
We present a theory of the electronic structure of GaN/AlN quantum dots (QD's), including
built-in strain and electric-field effects. A Green's function technique is developed to …
built-in strain and electric-field effects. A Green's function technique is developed to …
Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects
Self-assembled quantum dots are often modeled by continuum models (effective mass or k∙
p) that assume the symmetry of the dot to be that of its overall geometric shape. Lens …
p) that assume the symmetry of the dot to be that of its overall geometric shape. Lens …