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Island growth in electrodeposition
Electrochemical deposition of metals onto foreign substrates usually occurs through Volmer–
Weber island growth. The mechanism of island nucleation and growth dictates the shape …
Weber island growth. The mechanism of island nucleation and growth dictates the shape …
3-D integration and through-silicon vias in MEMS and microsensors
Z Wang - Journal of Microelectromechanical Systems, 2015 - ieeexplore.ieee.org
After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …
Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications
Z Wang - Microelectronic Engineering, 2019 - Elsevier
As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …
Influence of molecular weight of polyethylene glycol on microvia filling by copper electroplating
WP Dow, MY Yen, WB Lin, SW Ho - Journal of The …, 2005 - iopscience.iop.org
The influence of the molecular weight (Mw) of polyethylene glycol (PEG) on the microvia
filling by copper electroplating was demonstrated and examined by cross-sectional images …
filling by copper electroplating was demonstrated and examined by cross-sectional images …
Copper electrodeposition from an acidic plating bath containing accelerating and inhibiting organic additives
Copper electrodeposition on copper from still plating solutions of different compositions was
investigated utilising electrochemical impedance spectroscopy (EIS), cyclic voltammetry …
investigated utilising electrochemical impedance spectroscopy (EIS), cyclic voltammetry …
A time-dependent transport-kinetics model for additive interactions in copper interconnect metallization
R Akolkar, U Landau - Journal of The Electrochemical Society, 2004 - iopscience.iop.org
Electrodeposition of copper in the presence of additives mixture that is typically used in"
bottom-up" fill of sub-micrometer vias and trenches on semiconductor wafers is analyzed …
bottom-up" fill of sub-micrometer vias and trenches on semiconductor wafers is analyzed …
Curvature enhanced adsorbate coverage mechanism for bottom-up superfilling and bump control in damascene processing
Superconformal electrodeposition is explained by the curvature enhanced adsorbate
coverage (CEAC) mechanism. A CEAC model is used to quantitatively explain shape …
coverage (CEAC) mechanism. A CEAC model is used to quantitatively explain shape …
Curvature enhanced adsorbate coverage model for electrodeposition
The influence of a catalyst deactivating leveling additive in electrodeposition is explored in
the context of the previously developed curvature enhanced accelerator coverage model of …
the context of the previously developed curvature enhanced accelerator coverage model of …
Electrochemical and fill studies of a multicomponent additive package for copper deposition
P Taephaisitphongse, Y Cao… - Journal of the …, 2001 - iopscience.iop.org
An acid-copper plating bath containing chloride ions, polyethylene glycol (PEG), bis (3-
sulfopropyl) disulfide (SPS), and Janus Green B (JGB) has been characterized by …
sulfopropyl) disulfide (SPS), and Janus Green B (JGB) has been characterized by …
Electrodeposition of Cu in the PEI-PEG-Cl-SPS additive system: reduction of overfill bump formation during superfilling
The impact of branched polyethyleneimine (PEI) on Cu electrodeposition from an acidified
cupric sulfate electtrolyte containing a combination of superfilling additives, specifically …
cupric sulfate electtrolyte containing a combination of superfilling additives, specifically …