Island growth in electrodeposition

L Guo, G Oskam, A Radisic, PM Hoffmann… - Journal of Physics D …, 2011 - iopscience.iop.org
Electrochemical deposition of metals onto foreign substrates usually occurs through Volmer–
Weber island growth. The mechanism of island nucleation and growth dictates the shape …

3-D integration and through-silicon vias in MEMS and microsensors

Z Wang - Journal of Microelectromechanical Systems, 2015 - ieeexplore.ieee.org
After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …

Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

Z Wang - Microelectronic Engineering, 2019 - Elsevier
As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …

Influence of molecular weight of polyethylene glycol on microvia filling by copper electroplating

WP Dow, MY Yen, WB Lin, SW Ho - Journal of The …, 2005 - iopscience.iop.org
The influence of the molecular weight (Mw) of polyethylene glycol (PEG) on the microvia
filling by copper electroplating was demonstrated and examined by cross-sectional images …

Copper electrodeposition from an acidic plating bath containing accelerating and inhibiting organic additives

MA Pasquale, LM Gassa, AJ Arvia - Electrochimica Acta, 2008 - Elsevier
Copper electrodeposition on copper from still plating solutions of different compositions was
investigated utilising electrochemical impedance spectroscopy (EIS), cyclic voltammetry …

A time-dependent transport-kinetics model for additive interactions in copper interconnect metallization

R Akolkar, U Landau - Journal of The Electrochemical Society, 2004 - iopscience.iop.org
Electrodeposition of copper in the presence of additives mixture that is typically used in"
bottom-up" fill of sub-micrometer vias and trenches on semiconductor wafers is analyzed …

Curvature enhanced adsorbate coverage mechanism for bottom-up superfilling and bump control in damascene processing

TP Moffat, D Wheeler, SK Kim, D Josell - Electrochimica Acta, 2007 - Elsevier
Superconformal electrodeposition is explained by the curvature enhanced adsorbate
coverage (CEAC) mechanism. A CEAC model is used to quantitatively explain shape …

Curvature enhanced adsorbate coverage model for electrodeposition

TP Moffat, D Wheeler, SK Kim… - Journal of the …, 2006 - iopscience.iop.org
The influence of a catalyst deactivating leveling additive in electrodeposition is explored in
the context of the previously developed curvature enhanced accelerator coverage model of …

Electrochemical and fill studies of a multicomponent additive package for copper deposition

P Taephaisitphongse, Y Cao… - Journal of the …, 2001 - iopscience.iop.org
An acid-copper plating bath containing chloride ions, polyethylene glycol (PEG), bis (3-
sulfopropyl) disulfide (SPS), and Janus Green B (JGB) has been characterized by …

Electrodeposition of Cu in the PEI-PEG-Cl-SPS additive system: reduction of overfill bump formation during superfilling

SK Kim, D Josell, TP Moffat - Journal of The Electrochemical …, 2006 - iopscience.iop.org
The impact of branched polyethyleneimine (PEI) on Cu electrodeposition from an acidified
cupric sulfate electtrolyte containing a combination of superfilling additives, specifically …