Halide perovskites are a compelling candidate for the next generation of clean-energy-
harvesting technologies owing to their low cost, facile fabrication and outstanding …

This article presents an overview of the essential aspects in the fabrication of silicon and
some silicon/germanium nanostructures by metal‐assisted chemical etching. First, the basic …

Recently fabricated two-dimensional phosphorene crystal structures have demonstrated
great potential in applications of electronics. In this paper, strain effect on the electronic band …

In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

We perform first-principles calculations of mechanical and electronic properties of silicene
under strains. The in-plane stiffness of silicene is much smaller than that of graphene. The …

We investigate electron and hole mobilities in strained silicon nanowires (Si NWs) within an
atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very …

The metal-assisted etching direction of Si (110) substrates was found to be dependent upon
the morphology of the deposited metal catalyst. The etching direction of a Si (110) substrate …

The need for miniaturized and high-performance devices has attracted enormous attention
to the development of quantum silicon nanowires. However, the preparation of abundant …

The gate-all-around (GAA) Si nanowire (NW) field-effect transistor (FET) is considered one
of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its …

Assisted by noble metal particles, non-(100) Si substrates were etched in solutions with
different oxidant concentrations at different temperatures. The etching directions of (110) and …