In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …

Here, we fabricated highly sensitive metal-insulator-semiconductor (MIS) type diodes with
positive photo-response by introducing a polycrystalline Ce-WO 3 composite thin films as an …

In the present work, we have fabricated a highly photo responsive Schottky barrier diode
based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It …

In this study, the Schottky diodes (SDs) based on an interfacial layer of strontium oxide (SrO)
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …

In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on
glass and Si substrates by the sol-gel method combined with the spin coating method. The …

In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V 2 O
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …

In this paper, we report the influence of thermal annealing on structural, electrical properties
V 2 O 5 thin films and their application of SBD's. V 2 O 5 thin films were prepared using glass …

Abstract Complex dielectric (ε*= ε′− jε ″)/electric modulus (M*= M′+ jM ″), loss tangent
(tan δ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated …

Abstract Metal-insulator-semiconductor (MIS) structured Schottky barrier diodes (SBDs) are
the most significant device in optoelectronic device application. Here, we demonstrated a …

This study aimed to investigate the properties of WO3 thin films deposited on glass and
silicon substrates using the thermal spray technique. The films were prepared with a WO3 …