Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …

With the increasing utilisation of artificial intelligence, there is a renewed demand for the
development of novel neuromorphic computing owing to the drawbacks of the existing …

Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF)
formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory …

Implementation of biocompatible materials in resistive switching memory (ReRAM) devices
provides opportunities to use them in biomedical applications. We demonstrate a robust …

Recently, various resistance-based memory devices are being studied to replace charge-
based memory devices to satisfy high-performance memory requirements. Resistance …

Designing reliable and energy‐efficient memristors for artificial synaptic arrays in
neuromorphic computing beyond von Neumann architecture remains a challenge. Here …

The Forming phenomenon is observed via in situ transmission electron microscopy in the
Ag/Ta 2 O 5/Pt system. The device is switched to a low-resistance state as the dual filament …

Organic–inorganic halide perovskite is regarded as one of the potential candidates for next
generation resistive switching memory (memristor) material because of fast, millivolt‐scale …

The fully memristive neural network is emerging as a game‐changer in the artificial
intelligence competition. Artificial synapses and neurons, as two fundamental elements for …

Selectively activated inorganic synaptic devices, showing a high on/off ratio, ultrasmall
dimensions, low power consumption, and short programming time, are required to emulate …