This paper reviews the state of emerging transistor technologies capable of terahertz
amplification, as well as the state of transistor modeling as required in terahertz electronic …

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad
of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS …

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …

In this paper, we propose a new gate engineered do**less tunnel field effect transistor
(GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to …

A novel method for increasing the effective resistivity in low-doped silicon substrates is
presented. By creating a chain series of pn depletion junctions beneath the insulator, the …

A new Vernier time-to-digital converter (TDC) architecture using a delay line and a chain of
delay latches is proposed. The delay latches replace the functionality of one delay chain and …

In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching
patterns (OEPs)“fabricated to improve device radio frequency (RF) performance for Ka-band …

Research, design and innovation in the scope of millimeter-wave, and more recently,
terahertz circuits have all been driven by the ever-increasing need of humanity to stay …

The overall purpose of this paper is the prediction of the ultimate electrical high-frequency
performance potential for SiGeC HBTs under the constraints of practical applications. This …

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of
total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk …