Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

The present status and recent research results on amorphous oxide semiconductors (AOSs)
and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga …

Amorphous oxide semiconductors (AOSs) are expected as new channel materials in thin-
film transistors (TFTs) for large-area and/or flexible flat-panel displays and other giant …

US8363452B2 - Semiconductor device - Google Patents US8363452B2 - Semiconductor
device - Google Patents Semiconductor device Download PDF Info Publication number …

An object is to provide a memory device including a memory element that can be operated
without problems by a thin film transistor with a low off-state current. Provided is a memory …

We report on comprehensive results identifying the ground state of a triangular-lattice
structured YbZnGaO 4 as a spin glass, including no long-range magnetic order, prominent …

Disclosed is a semiconductor device capable of functioning as a memory device. The
memory device comprises a plurality of memory cells, and each of the memory cells contains …

GI IC5/02(2006.01)(74) Attorney, Agent, or Firm—Fish & Richardson PC. GI
IC5/06(2006.01)(57) ABSTRACT GI IC5/10(2006.01) GIC II/24(2006.01) The semiconductor …

With the purpose of creating ZnO-based amorphous transparent conductors, a range of
amorphous films InGaoO3 (ZnO) m (where m≤ 4) was prepared using a pulsed-laser …

The semiconductor element includes an oxide semiconductor layer on an insulating surface;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a …