Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …

The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Magnetoresistive (MR) sensors have been identified as promising candidates for the
development of high-performance magnetometers due to their high sensitivity, low cost, low …

Spintronics Handbook, Second Edition offers an update on the single most comprehensive
survey of the two intertwined fields of spintronics and magnetism, covering the diverse array …

Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) is an emerging
nonvolatile memory that uses magnetic tunnel junctions (MTJs) to store information. MTJs …

We report enhanced tunnel magnetoresistance (TMR) ratios of 188%(308%) at room
temperature and 328%(479%) at 15 K for cation-site-disordered MgAl 2 O 4-barrier …

In the field of spintronics, there is a strong demand for barrier materials in magnetic tunnel
junctions (MTJs) having high tunnel magnetoresistance (TMR) and low resistance area …

We investigated the spin-dependent transport properties of Fe/MgAl 2 O 4/Fe (001) magnetic
tunneling junctions (MTJs) on the basis of first-principles calculations of the electronic …

Perpendicular magnetic anisotropy (PMA) is becoming increasingly important in spintronics
research, especially for high-density magnetoresistive random access memories (MRAMs) …