We investigate the impact of amorphization and C co-implantation on B diffusion and
activation properties after conventional spike rapid thermal annealing (RTA). We observe …

Defects in semiconductors have been studied for many years, in many cases with a view
toward controlling their behaviour through various forms of “defect engineering”. For …

The impact of Si interstitial (Si i) flux suppression on the formation of P junctions by rapid
thermal annealing (RTA) is demonstrated. Here we investigate the role of amorphization …

The advent of high surface-to-volume ratio devices has necessitated a revised approach to
parameter extraction and process evaluation in field-effect transistor technologies. In this …

Individual silicon nanowires (NWs) doped either by ion implantation or by in situ dopant
incorporation during NW growth were investigated by scanning spreading resistance …

Isotopically pure semiconductors have important applications for cooling electronic devices
and quantum computing and sensing. Raw materials of sufficiently high isotopic purity are …