The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC)
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for
modern power electronics systems due to large economic implications. SiC mosfet modules …

This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …

This paper proposes a new method for the investigation of the short-circuit safe operation
area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the …

This paper presents a thorough characterization of 10 kV SiC MOSFET power modules,
equipped with third-generation mosfet chips and without external free-wheeling diodes …

A short-circuit eg in a half-bridge converter is a severe and potentially destructive operation
condition for a power transistor and needs to be turned-off quickly and safely. In order to …

In this article, a robust short-circuit (SC) protection circuit using Rogowski current sensor
(RCS) for SiC mosfet-based power conversion systems is proposed, along with the detailed …

The reliability of the SiC MOSFET has always been a factor hindering the device application,
especially under high voltage and high current conditions, such as in the short circuit events …

This paper adds some new results on the short circuit (SC) robustness of novel wide
bandgap (WBG) devices presented in [1-3] for 1.2 kV SiC MOSFETs but also for other …

The superior electrical and thermal characteristics of silicon carbide (SiC) MOSFETs bring
major challenges to its short-circuit reliability. To fully understand its short-circuit mechanism …