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Kinetic Monte Carlo simulation for semiconductor processing: A review
Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …
the complex processing of semiconductor devices. In this review, some of the main …
Front-end process modeling in silicon
Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …
semiconductor devices. Ion implantation and thermal anneal models are key to predict …
Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-
type cells. We use rapid thermal annealing with temperatures up to 1250° C and annealing …
type cells. We use rapid thermal annealing with temperatures up to 1250° C and annealing …
Manipulation of native point defect behavior in rutile TiO2 via surfaces and extended defects
KL Gilliard, EG Seebauer - Journal of Physics: Condensed …, 2017 - iopscience.iop.org
Semiconductor surfaces offer efficient pathways for exchanging native point defects with the
underlying bulk. For rutile TiO 2 (1 1 0), isotopic self-diffusion studies of oxygen have …
underlying bulk. For rutile TiO 2 (1 1 0), isotopic self-diffusion studies of oxygen have …
From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
An atomistic model for self-interstitial extended defects is presented in this work. The model
is able to predict a wide variety of experimental results by using a limited set of assumptions …
is able to predict a wide variety of experimental results by using a limited set of assumptions …
Modeling the annealing of dislocation loops in implanted c-Si solar cells
FA Wolf, A Martinez-Limia… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
This paper is motivated by the question of how residual implantation damage degrades
solar cell performance. In order to avoid such degradation, annealing processes of …
solar cell performance. In order to avoid such degradation, annealing processes of …
Influence of boron implantation induced defects on solar cells: Modeling the process defects
S Masilamani, R Ammapet Vijayan… - Journal of Applied …, 2023 - pubs.aip.org
The effect of process-induced defects on the photo-generated charge-carrier lifetime and
solar cell performance is critical, which will help optimize the process recipe. In this work, we …
solar cell performance is critical, which will help optimize the process recipe. In this work, we …
On a computationally efficient approach to boron-interstitial clustering
J Schermer, A Martinez-Limia, P Pichler, C Zechner… - Solid-state …, 2008 - Elsevier
The physical concepts developed to describe the transient activation of boron during post-
implantation annealing are based on the concurrent formation of complexes comprising …
implantation annealing are based on the concurrent formation of complexes comprising …
[PDF][PDF] Modeling of annealing processes for ion-implanted single-crystalline silicon solar cells
FA Wolf - 2014 - researchgate.net
Ion implantation technology has become economically competitive for solar cell do** in
about 2012. The decisive reduction in production costs was achieved by using plasma …
about 2012. The decisive reduction in production costs was achieved by using plasma …
Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator
EM Bazizi, PF Fazzini, A Pakfar, C Tavernier… - Journal of Applied …, 2010 - pubs.aip.org
The effect of the buried Si–SiO 2 interface on the transient enhanced diffusion (TED) of
boron in silicon on insulator (SOI) structures has been investigated. To this purpose, boron …
boron in silicon on insulator (SOI) structures has been investigated. To this purpose, boron …