Kinetic Monte Carlo simulation for semiconductor processing: A review

I Martin-Bragado, R Borges, JP Balbuena… - Progress in Materials …, 2018 - Elsevier
Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

Front-end process modeling in silicon

L Pelaz, LA Marqués, M Aboy, P López… - The European Physical …, 2009 - Springer
Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters

J Krügener, R Peibst, FA Wolf, E Bugiel… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-
type cells. We use rapid thermal annealing with temperatures up to 1250° C and annealing …

Manipulation of native point defect behavior in rutile TiO2 via surfaces and extended defects

KL Gilliard, EG Seebauer - Journal of Physics: Condensed …, 2017 - iopscience.iop.org
Semiconductor surfaces offer efficient pathways for exchanging native point defects with the
underlying bulk. For rutile TiO 2 (1 1 0), isotopic self-diffusion studies of oxygen have …

From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

I Martin-Bragado, I Avci, N Zographos, M Jaraiz… - Solid-state …, 2008 - Elsevier
An atomistic model for self-interstitial extended defects is presented in this work. The model
is able to predict a wide variety of experimental results by using a limited set of assumptions …

Modeling the annealing of dislocation loops in implanted c-Si solar cells

FA Wolf, A Martinez-Limia… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
This paper is motivated by the question of how residual implantation damage degrades
solar cell performance. In order to avoid such degradation, annealing processes of …

Influence of boron implantation induced defects on solar cells: Modeling the process defects

S Masilamani, R Ammapet Vijayan… - Journal of Applied …, 2023 - pubs.aip.org
The effect of process-induced defects on the photo-generated charge-carrier lifetime and
solar cell performance is critical, which will help optimize the process recipe. In this work, we …

On a computationally efficient approach to boron-interstitial clustering

J Schermer, A Martinez-Limia, P Pichler, C Zechner… - Solid-state …, 2008 - Elsevier
The physical concepts developed to describe the transient activation of boron during post-
implantation annealing are based on the concurrent formation of complexes comprising …

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

EM Bazizi, PF Fazzini, A Pakfar, C Tavernier… - Journal of Applied …, 2010 - pubs.aip.org
The effect of the buried Si–SiO 2 interface on the transient enhanced diffusion (TED) of
boron in silicon on insulator (SOI) structures has been investigated. To this purpose, boron …