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Stimulating Oxide Heterostructures: A Review on Controlling SrTiO3‐Based Heterointerfaces with External Stimuli
Numerous of the greatest inventions in modern society, such as solar cells, display panels,
and transistors, rely on a simple concept: An external stimulus is applied to a material and …
and transistors, rely on a simple concept: An external stimulus is applied to a material and …
Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability
Magnetic field-induced changes in the electrical resistance of materials reveal insights into
the fundamental properties governing their electronic and magnetic behavior. Various …
the fundamental properties governing their electronic and magnetic behavior. Various …
Strain-tunable magnetism at oxide domain walls
Applying stress to a ferroelastic material results in a nonlinear strain response as domains of
different orientations mechanically switch. The ability to write, erase and move domain walls …
different orientations mechanically switch. The ability to write, erase and move domain walls …
Unearthing the emerging properties at buried oxide heterointerfaces: the γ-Al 2 O 3/SrTiO 3 heterostructure
The symmetry breaking that is formed when oxide layers are combined epitaxially to form
heterostructures has led to the emergence of new functionalities beyond those observed in …
heterostructures has led to the emergence of new functionalities beyond those observed in …
Giant Tunability of the Two-Dimensional Electron Gas at the Interface of γ-Al2O3/SrTiO3
Two-dimensional electron gases (2DEGs) formed at the interface between two oxide
insulators provide a rich platform for the next generation of electronic devices. However …
insulators provide a rich platform for the next generation of electronic devices. However …
Large Linear Magnetoresistance of High‐Mobility 2D Electron System at Nonisostructural γ‐Al2O3/SrTiO3 Heterointerfaces
Materials with a large linear magnetoresistance (MR) are great candidates for magnetic
sensors, but rarity boosts investigations for exploring this MR in material physics. 2D …
sensors, but rarity boosts investigations for exploring this MR in material physics. 2D …
Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost
The rich functionalities of transition-metal oxides and their interfaces bear an enormous
technological potential. Its realization in practical devices requires, however, a significant …
technological potential. Its realization in practical devices requires, however, a significant …
Orbital Ordering of the Mobile and Localized Electrons at Oxygen-Deficient LaAlO3/SrTiO3 Interfaces
Interfacing different transition-metal oxides opens a route to functionalizing their rich
interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic …
interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic …
Fully Optical Modulation of the Two-Dimensional Electron Gas at the γ-Al2O3/SrTiO3 Interface
W Niu, YW Fang, R Liu, Z Wu, Y Chen… - The Journal of …, 2022 - ACS Publications
Two-dimensional electron gas (2DEG) formed at the heterointerface between two oxide
insulators hosts plenty of emergent phenomena and provides new opportunities for …
insulators hosts plenty of emergent phenomena and provides new opportunities for …
Electron Mobility in
One of the key issues in engineering oxide interfaces for electronic devices is achieving high
electron mobility. SrTiO 3-based interfaces with high electron mobility have gained a lot of …
electron mobility. SrTiO 3-based interfaces with high electron mobility have gained a lot of …