Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

Wide band gap III-nitride materials have gained considerable attention as promising
semiconductor materials for light-emitting photonic diodes and high-frequency/power …

Abstract Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-
standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material …

Do** is essential in the growth of bulk GaN substrates, which could help control the
electrical properties to meet the requirements of various types of GaN-based devices. The …

This paper presents a comparative study of electron transport phenomena in n-type gallium
nitride strongly doped, above the Mott transition, with silicon and germanium. The samples …

Gallium nitride is an increasingly technologically relevant material system. While donor
do** GaN to low and intermediate dopant concentrations using silicon and germanium …

From the previous studies, one of the challenges in the oxide vapor phase epitaxy (OVPE)
method was suppressing poly-crystal generation for thick GaN growth. In this study, thick …

Results of gallium nitride crystallization on native seeds by Hydride Vapor Phase Epitaxy
method are described. The seeds are high quality ammonothermal GaN crystals. Properties …

The compatibility of impurity do** and the suppression of residual stress are crucial for
fabricating a semi‐insulating GaN (SI‐GaN) substrate. Herein, a new method to fabricate …

This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using
fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation …