We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and
(111) CoFe 2 O 4 (CFO) ferrimagnetic insulating films. The results can be described in terms …

The compensation of the depolarization field in ferroelectric layers requires the presence of
a suitable amount of charges able to follow any variation of the ferroelectric polarization …

La 1-xA xMnO 3 (A= Sr, Ca) manganites are popular examples of this behavior that could be
eventually used to engineer the barrier width.[7, 13] However, although large values of TER …

Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal
heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse …

We study the spin Hall magnetoresistance (SMR) in Pt grown in situ on CoFe 2 O 4 (CFO)
ferrimagnetic insulating films. A careful analysis of the angle-dependent and field-dependent …

Ultrathin Pt films grown on insulating ferrimagnetic CoF e 2 O 4 (111) epitaxial films display
a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here …

Ferroelectric BaTiO3 films with large polarization have been integrated with Si (001) by
pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate …

The potential growth modes for epitaxial growth of Fe3O4 on SrTiO3 (001) are investigated
through control of the energetics of the pulsed-laser deposition growth process (via …

Ferroelectrics are considered to be promising candidates for highly energy‐efficient
electronic devices in future information technologies owing to their nonvolatile and low …

An increasing demand in realizing ultra-fast, compact and ultra-low power spintronic devices
has impelled the creation of novel multiferroic heterostructures which enable voltage control …