In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

Contact mechanisms and design principles of alloyed ohmic contacts to n-GaN are
investigated. For the investigation, both tunnel contacts and thermionic contacts are …

A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been
developed for obtaining low-resistance ohmic contacts to n–GaN. Excellent ohmic …

The contact mechanism and design principles for nonalloyed ohmic contacts are
investigated. Illustrative studies of various contacts show wide validity of the design …

The temperature dependence of the specific resistance ρ c in annealed Ti∕ Al∕ Ni∕ Au
contacts on n-type GaN was monitored, obtaining information on the current transport …

This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …

Abstract The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were
studied by current–voltage (I–V) and transmission-line-method measurements. The effect of …

Ohmic performance and surface morphology of Ti∕ Al∕ metal∕ Au schemes, where metal
is Ti, Mo, Pt, Ir, Ni, Ta, or Nb, have been studied to identify the role of the barrier layer on …