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Improved threshold voltage stability for GaN p-channel field effect transistors by hydrogen plasma treatment
H Yue, G Yu, B Guo, Y Li, A Li, S Lu… - Journal of Physics D …, 2025 - iopscience.iop.org
This work proposes a novel gate stack with hydrogen (H) plasma treatment to improve the
stability of p-channel field effect transistors (p-FETs). The threshold voltage (V TH) of this …
stability of p-channel field effect transistors (p-FETs). The threshold voltage (V TH) of this …