Recent progress in phase-change memory technology

GW Burr, MJ Brightsky, A Sebastian… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
We survey progress in the PCM field over the past five years, ranging from large-scale PCM
demonstrations to materials improvements for high–temperature retention and faster …

Nanoscale resistive switching memory devices: a review

S Slesazeck, T Mikolajick - Nanotechnology, 2019 - iopscience.iop.org
In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

Phase-change memory—Towards a storage-class memory

SW Fong, CM Neumann… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Phase-change memory (PCM) has undergone significant academic and industrial research
in the last 15 years. After much development, it is now poised to enter the market as a …

Evolution of phase-change memory for the storage-class memory and beyond

T Kim, S Lee - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, the development history and the technical hurdles of phase-change memory
(PCM) are reviewed and recent progress and future directions are discussed. Prospects of …

Phase change memory applications: the history, the present and the future

P Fantini - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Abstract 50 years from the discovery of the phase change memory (PCM) is a sufficient time
frame to see the steps of this technology with a historical perspective. So, a historical review …

Bipolar switching in chalcogenide phase change memory

N Ciocchini, M Laudato, M Boniardi, E Varesi… - Scientific reports, 2016 - nature.com
Phase change materials based on chalcogenides are key enabling technologies for optical
storage, such as rewritable CD and DVD and recently also electrical nonvolatile memory …

Phase change and magnetic memories for solid-state drive applications

C Zambelli, G Navarro, V Sousa… - Proceedings of the …, 2017 - ieeexplore.ieee.org
The state-of-the-art solid-state drives (SSDs) now heterogeneously integrate NAND Flash
and dynamic random access memories (DRAMs) to partially hide the limitation of the …

Electro-thermal model for thermal disturbance in cross-point phase-change memory

S Yoo, HD Lee, S Lee, H Choi… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
We developed an electro-thermal model for cross-point phase-change memory (X-PCM)
and compared the calculation values with the experimental results. In order to simulate the …

3DXpoint fundamentals

F Pellizzer, A Redaelli - Semiconductor Memories and Systems, 2022 - Elsevier
In this chapter, the 3DXpoint physics, technology, and operation are discussed. The chapter
will start by reviewing the PCM technology on which most of the learning about …

BEOL process effects on ePCM reliability

A Redaelli, A Gandolfo, G Samanni… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
The effect of back-end of line (BEOL) process on cell performance and reliability of Phase-
Change Memory embedded in a 28nm FD-SOI platform (ePCM) is discussed. The …