The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

Memristive devices, whose conductance depends on previous programming history, are of
significant interest for building nonvolatile memory and brain-inspired computing systems …

Oxygen vacancy migration is studied in monoclinic Hf O 2 and across its interface with Si O 2
through density functional calculations. In Hf O 2⁠, long-range diffusion shows activation …

Ferroelectric (FE) hafnium oxide is a promising candidate for memory applications. In this
paper, endurance, imprint, and retention tests are carried out on FE aluminum-doped …

We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers
for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150° C …

We present a facile method to fabricate hydrophilic patterns in superhydrophobic Si
nanowire (NW) arrays for guiding water droplets. The superhydrophobic Si NW arrays were …

OBJECTIVE: The aim of this study was to characterize the surface of Y-TZP after abrasion
with various airborne particles. METHODS: The Y-TZP blanks were cut into 44 discs and …

The lattice vibrations, elastic anisotropy, electronic properties and stress-strain behavior of
Hf x Si y phases were predicted using a first-principles calculations. The enthalpies of …

HfSe2 field effect transistors are systematically studied in order to selectively tune their
electrical properties by optimizing layer thickness and oxygen plasma treatment. The …

We perform ab initio calculations, based on density functional theory, for substitutional and
vacancy defects in the monoclinic hafnium oxide (m-HfO 2) and α-quartz (SiO 2). The neutral …