The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

Atomic transport in thermal growth of thin and ultrathin silicon oxide, nitride, and oxynitride
films on Si is reviewed. These films constitute the gate dielectrics, the “heart” of silicon metal …

Interfacial characteristics of Al/SiO 2/n-type 6H–SiC metal–oxide–semiconductor capacitors
fabricated by rapid thermal processing (RTP) with N 2 O and NO annealing are investigated …

Experiments have demonstrated that nitridation provides critically important improvements in
the quality of SiO 2–SiC interface. This article provides results and analysis aimed at …

Silicon dioxide (SiO 2)/silicon carbide (SiC) structures annealed in nitric oxide (NO) and
argon gas ambiences were investigated using x-ray photoelectron spectroscopy (XPS). The …

Thinning of the gate dielectric as required by scaling rules is currently inhibiting the so far
outstanding evolution of the silicon age, owing to unacceptably high gate current (leakage …

Oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient at
950° C have been investigated using x‐ray photoelectron spectroscopy (XPS), secondary …

This letter addresses the question of why it is possible to grow high-quality oxide films on N-
type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface …

Nitrogen mixed into silicon dioxide on Si (100) is used in the present, and maybe last,
generation of silicon oxide-based complementary metal-oxide semiconductor (CMOS) …

Atomic oxygen, which can be liberated as an intermediate product in the decomposition of
N2, is shown to be effective in removing N previously incorporated in SiO2 layers grown in …