Yellow–red emission from (Ga, In) N heterostructures
Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …
to a lesser extent green. Extending their spectral range to longer wavelengths while …
Recent research on indium-gallium-nitride-based light-emitting diodes: Growth conditions and external quantum efficiency
The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells
Nominal InN monolayers grown by molecular beam epitaxy on GaN (0001) are investigated
combining in situ reflection high-energy electron diffraction (RHEED), transmission electron …
combining in situ reflection high-energy electron diffraction (RHEED), transmission electron …
Beyond quantum efficiency limitations originating from the piezoelectric polarization in light-emitting devices
Blue and violet light-emitting devices based on III-nitrides caused an ongoing revolution in
general lighting. One of the highly deliberated discussions in this field is devoted to the …
general lighting. One of the highly deliberated discussions in this field is devoted to the …
Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
We investigate the structural properties of a series of high alloy content InGaN epilayers
grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature …
grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature …
Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy
The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted
molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN …
molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN …
Understanding and controlling indium incorporation and surface segregation on InGaN surfaces: An ab initio approach
The incorporation of In into the technologically relevant (0001)(Ga-polar) and (000 1¯)(N-
polar) surfaces of In 0.25 Ga 0.75 N is investigated using density functional theory. The …
polar) surfaces of In 0.25 Ga 0.75 N is investigated using density functional theory. The …
Absolute N-atom density measurement in an Ar/N2 micro-hollow cathode discharge jet by means of ns-two-photon absorption laser-induced fluorescence
In this work, nanosecond two-photon absorption laser-induced fluorescence (TALIF) is used
to probe the absolute density of nitrogen atoms in a plasma generated using a micro-hollow …
to probe the absolute density of nitrogen atoms in a plasma generated using a micro-hollow …
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
We report the interplay between In incorporation and strain relaxation kinetics in high-In-
content In x Ga 1-x N (x= 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For …
content In x Ga 1-x N (x= 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For …
Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers
In this work we study the peculiar role of gallium and nitrogen atoms in the growth of InGaN
by Plasma Assisted Molecular Beam Epitaxy (PAMBE). We investigate growth of InGaN …
by Plasma Assisted Molecular Beam Epitaxy (PAMBE). We investigate growth of InGaN …