Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method
Investigation of Cd behavior in the ZnCdO alloys, where Cd content exceeds the solubility
limit, is of importance due to possible impurity segregation and second phases' formation in …
limit, is of importance due to possible impurity segregation and second phases' formation in …
Tuning the emission of ZnO nanorods based light emitting diodes using Ag do**
We have fabricated, characterized, and compared ZnO nanorods/p-GaN and n-Zn 0.94 Ag
0.06 O nanorods/p-GaN light emitting diodes (LEDs). Current-voltage measurement showed …
0.06 O nanorods/p-GaN light emitting diodes (LEDs). Current-voltage measurement showed …
Properties of solid solutions, doped film, and nanocomposite structures based on zinc oxide
A study of the properties of materials based on the wide bandgap zinc oxide semiconductor,
which are promising for application in optoelectronics, photovoltaics and nanoplasmonics …
which are promising for application in optoelectronics, photovoltaics and nanoplasmonics …
Zinc oxide thin films on silicon carbide substrates (ZnO/SiC): electro-optical properties and electrically active defects
The electrical and optical properties of heterojunctions formed by thermally deposited ZnO
thin films on n-type 4H-SiC substrates have been investigated. Current–voltage …
thin films on n-type 4H-SiC substrates have been investigated. Current–voltage …
Study of donor Al impurity state in ZnO by fullerene like model
In this article the fullerene like Zn 32 Al 4 O 36 cluster was investigated. The optimized
geometry, cohesive and electronic properties of this cluster with different distribution of Al-O …
geometry, cohesive and electronic properties of this cluster with different distribution of Al-O …
Resonant tunneling in the ZnO/Zn1− xCdxO/ZnO double barrier structures: Theoretical study
II Shtepliuk - Superlattices and Microstructures, 2014 - Elsevier
Numerical simulations of Zn 1− x Cd x O/ZnO-based resonant tunneling diode structures are
presented, employing the transfer matrix formalism and the Tsu–Esaki model. The factors …
presented, employing the transfer matrix formalism and the Tsu–Esaki model. The factors …
Effect of c-axis inclination angle on the properties of ZnO/Zn1− xCdxO/ZnO quantum wells
I Shtepliuk, V Khranovskyy, R Yakimova - Thin Solid Films, 2016 - Elsevier
The development of optoelectronic devices based on highly-promising Zn 1− x Cd x O
semiconductor system demands deep understanding of the properties of the Zn 1− x Cd x O …
semiconductor system demands deep understanding of the properties of the Zn 1− x Cd x O …
The physics of high-conductivity transparent materials based on wide-band zinc oxide
The properties of transparent conductive materials based on wide-gap zinc oxide
semiconductors are considered, which are promising in their application to photovoltaics …
semiconductors are considered, which are promising in their application to photovoltaics …
[PDF][PDF] Study of the clusterization of CdO phase in ZnCdO alloys by modeling fullerene-like Zn₄₄Cd₄O₄₈ cluster
L Ovsiannikova, V Kartuzov, I Shtepliuk… - … Physica Polonica A, 2016 - bibliotekanauki.pl
The structural, cohesive and electronic properties of fullerene-like isolated Zn₄₄Cd₄O₄₈
cluster with consideration of CdO phase clusterization are studied in the frames of density …
cluster with consideration of CdO phase clusterization are studied in the frames of density …
Complementary study of the photoluminescence and electrical properties of ZnO films grown on 4H-SiC substrates
We have studied the photoluminescence and electrical properties of ZnO films grown
epitaxially by atmospheric pressure MOCVD on 4H-SiC substrates. The dominating D° X …
epitaxially by atmospheric pressure MOCVD on 4H-SiC substrates. The dominating D° X …