Study and analysis of advanced 3D multi-gate junctionless transistors
As the IC technology is evolving very rapidly, the feature size of the device has been
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
RF and linearity parameter analysis of junction-less gate all around (JLGAA) MOSFETs and their dependence on gate work function
In this work, a detailed investigation of RF and linearity analysis of junction-less Gate All
Around (JLGAA) MOSFETs through SILVACO TCAD device simulator have been …
Around (JLGAA) MOSFETs through SILVACO TCAD device simulator have been …
[PDF][PDF] Advanced MOSFET Technologies for Next Generation Communication Systems-Perspective and Challenges: A Review.
H Sood, VM Srivastava, G Singh - Journal of Engineering Science & …, 2018 - academia.edu
In this review, authors have retrospect the state-of-art dimension scaling and emerging other
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …
Device and circuit-level performance comparison of GAA nanosheet FET with varied geometrical parameters
NA Kumari, P Prithvi - Microelectronics Journal, 2022 - Elsevier
In this paper, DC and analog/RF figures of merit (FOMs) for different geometrical variations
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …
A comprehensive analysis and performance comparison of CombFET and NSFET for CMOS circuit applications
NA Kumari, P Prithvi - AEU-International Journal of Electronics and …, 2023 - Elsevier
The performance of comb-like channel field effect transistor (CombFET) and nanosheet FET
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …
Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species
In recent times, FET-based sensors have been widely used in industrial and domestic
applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded …
applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded …
Effect of interface trap charges on performance variation of heterogeneous gate dielectric junctionless-TFET
In this paper, we investigate the effect of interface trap charges on the variation of
heterogeneous gate dielectric junctionless-tunnel FET (JL-TFET) by introducing both donor …
heterogeneous gate dielectric junctionless-tunnel FET (JL-TFET) by introducing both donor …
Nanosheet field effect transistor device and circuit aspects for future technology nodes
Moore's law states that the technical innovations are being absorbed already. The device's
controllability has dramatically improved since moving from a straightforward MOSFET …
controllability has dramatically improved since moving from a straightforward MOSFET …
Impact of gate material engineering (GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless …
Abstract In this paper Gate Material Engineered (GME) Gate-Stack (GS) silicon nanowire
Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack …
Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack …
Impact of interface trap charges on performance of electrically doped tunnel FET with heterogeneous gate dielectric
In this paper, we investigate for the first time effect of positive (donor) and negative
(acceptor) interface trap charges on the performance of proposed heterogeneous gate …
(acceptor) interface trap charges on the performance of proposed heterogeneous gate …