At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …

Neuromorphic computing based on memristors capable of in-memory computing is
promising to break the energy and efficiency bottleneck of well-known von Neumann …

Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

Abstract Memristors proposed by Leon Chua provide a new type of memory device for novel
neuromorphic computing applications. However, the approaching of distinct multi …

Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on
substrates, have attracted tremendous interest in the past decade. These unique …

Negative pressure has emerged as a powerful tool to tailor the physical properties of
functional materials. However, a negative pressure control of spin-phonon coupling for …

Enhancement of oxygen ion conductivity in oxides is important for low-temperature (< 500°
C) operation of solid oxide fuel cells, sensors and other ionotronic devices. While huge ion …

Resistive switching (RS) is currently one of the hot topics in the frontier between materials
science and microelectronics, crosslinking both research communities. Among the different …