Thin-film solar cells made from non-toxic and earth-abundant materials are needed to
substitute the current best-developed absorbers such as cadmium telluride (CdTe) and …

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting,
sequential reactions localized at the growing film surface. It guarantees exceptional …

Since the discovery of graphene, there has been an ever-increasing interest in two-
dimensional (2D) layered materials with exceptional properties. To this end, a variety of …

This article reports the design and computational analysis of an efficient GeSe-based n-
ZnSe/p-GeSe/p+-WSe 2 dual-heterojunction (DH) thin film solar cell using SCAPS-1D …

Chalcogenide compounds are the main characters in a revolution in electronic memories.
These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good …

The scientific community has witnessed tremendous expansion of research on layered (ie,
two-dimensional, 2D) materials, with increasing recent focus on applications to photonics …

Germanium selenide (GeSe), a new 2D semiconductor material, is an attractive material due
to its excellent optoelectronic properties, which hold tremendous promise in a wide range of …

The use of atomic layer deposition (ALD) for the deposition of chalcogenide thin films have
offered great potential applications in numerous research areas such as change-memory …

An ovonic threshold switch (OTS) based on amorphous chalcogenide materials possesses
several desirable characteristics, including high selectivity and fast switching speed …

For the future scaling of 3D cross-point (X-point) memory, it is necessary to implement
atomic layer deposition (ALD) of chalcogenides for ovonic threshold switch (OTS) …