Green gap in GaN-based light-emitting diodes: in perspective
Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
Disorder effects in nitride semiconductors: impact on fundamental and device properties
Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
This paper introduces a novel method to account for quantum disorder effects into the
classical drift-diffusion model of semiconductor transport through the localization landscape …
classical drift-diffusion model of semiconductor transport through the localization landscape …
On the search for efficient solid state light emitters: Past, present, future
C Weisbuch - ECS Journal of Solid State Science and …, 2019 - iopscience.iop.org
The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
TJ Yang, R Shivaraman, JS Speck… - Journal of Applied Physics, 2014 - pubs.aip.org
In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN
quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN …
quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN …
Localization landscape theory of disorder in semiconductors. I. Theory and modeling
We present here a model of carrier distribution and transport in semiconductor alloys
accounting for quantum localization effects in disordered materials. This model is based on …
accounting for quantum localization effects in disordered materials. This model is based on …
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
Urbach tails in semiconductors are often associated to effects of compositional disorder. The
Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased …
Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased …
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
We report on the influence of nanoscale indium fluctuations on physical properties for
multiple quantum well (QW) light emitting diodes (LEDs). A commercial grade c-plane LED …
multiple quantum well (QW) light emitting diodes (LEDs). A commercial grade c-plane LED …