We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn
concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In …

We report on high-resolution x-ray diffraction measurements of (Ga, Mn) As and (Ga, Mn)(As,
P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present …

Control of magnetic domain walls (DWs) and their propagation is among the most promising
development directions for future information-storage devices. The well-established tools for …

In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion
irradiation. According to the micro-magnetic parameters, eg resonance fields and anisotropy …

We report on the determination of micromagnetic parameters of epilayers of the
ferromagnetic semiconductor (Ga, Mn) As, which has an easy axis in the sample plane, and …

We use short acoustic pulses to induce a fast irreversible switching of the magnetization
orientation in a layer of (Ga, Mn)(As, P). The pulses are generated by femtosecond optical …

The manganese induced magnetic, electrical, and structural modification in InMnP epilayers,
prepared by Mn ion implantation and pulsed laser annealing, are investigated in the …

We demonstrate charge-mediated and non-volatile control of anisotropic magnetoresistance
(AMR) in a dilute magnetic semiconductor (Ga, Mn)(As, P) with an integrated polymer …

We investigate the dependence of the magnetic and structural properties of (Ga, Mn) As/(Al,
Ga, Mn) As bilayer films on the stoichiometry of the interface region. For films incorporating a …

Since its first successful growth in 1996, the ferromagnetic semiconductor (Ga, Mn)-As has
had a great influence on the research field of semiconductor spintronics. Among the …