Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to
meet the needs of producing high-quality, large-area fl at displays with perfect structure and …

Capacitors represent the largest obstacle to dynamic random-access memory (DRAM)
technology evolution because the capacitor properties govern the overall operational …

Although laminate structures are widely used in electrostatic capacitors, unavoidable
heterogeneous interfaces often deteriorate the dielectric properties by impeding film …

Aluminum incorporated hafnium oxide (HfAlO) has garnered significant attention due to its
high dielectric constant. The present study employs supercycle plasma-enhanced atomic …

MoO2, a conductive metal oxide, has attracted considerable attention as an electrode
material in metal–insulator–metal (MIM) capacitors owing to its crystallinity and high work …

Nanolaminates consisting of Al 2 O 3 and TiO 2 oxide sublayers were synthesized by using
atomic layer deposition to produce individual layers with atomic scale thickness control. The …

The introduction of atomic layer deposition (ALD), to the microelectronics industry has
introduced a large number of new possible materials able to be deposited in layers with …