Junctionless multigate field-effect transistor
This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there
are no junctions. The channel do** is equal in concentration and type to the source and …
are no junctions. The channel do** is equal in concentration and type to the source and …
Junctionless nanowire transistor (JNT): Properties and design guidelines
Junctionless transistors are variable resistors controlled by a gate electrode. The silicon
channel is a heavily doped nanowire that can be fully depleted to turn the device off. The …
channel is a heavily doped nanowire that can be fully depleted to turn the device off. The …
Performance estimation of junctionless multigate transistors
This paper describes the simulation of the electrical characteristics of a new transistor
concept called the “Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed …
concept called the “Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed …
A review of quantum transport in field-effect transistors
Confinement in small structures has required quantum mechanics, which has been known
for a great many years. This leads to quantum transport. The field-effect transistor has had …
for a great many years. This leads to quantum transport. The field-effect transistor has had …
Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor
A Chakraborty, A Sarkar - Journal of Computational Electronics, 2017 - Springer
An analytical model of dielectric-modulated junctionless gate-stack surrounding gate
MOSFET for application as a biosensor is presented. An expression for the channel-center …
MOSFET for application as a biosensor is presented. An expression for the channel-center …
Analytical modeling of charge plasma-based optimized nanogap embedded surrounding gate MOSFET for label-free biosensing
In this paper, analytical modeling of a charge plasma-based nanogap embedded
surrounding gate MOSFET biosensor for label-free biosensing has been presented and …
surrounding gate MOSFET biosensor for label-free biosensing has been presented and …
Experimental demonstration of ultrashort-channel (3 nm) junctionless FETs utilizing atomically sharp V-grooves on SOI
S Migita, Y Morita, T Matsukawa… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
Ultrashort-channel junctionless FETs (JL-FETs) were fabricated on silicon-on-insulator
substrates utilizing atomically sharp V-shaped grooves produced by anisotropic wet etching …
substrates utilizing atomically sharp V-shaped grooves produced by anisotropic wet etching …
Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors
KI Goto, TH Yu, J Wu, CH Diaz, JP Colinge - Applied Physics Letters, 2012 - pubs.aip.org
Measurements made on heavily doped n-channel accumulation-mode planar metal-oxide-
semiconductor field-effect transistors (MOSFETs) reveal that the channel mobility can reach …
semiconductor field-effect transistors (MOSFETs) reveal that the channel mobility can reach …
Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors
J Tae Park, J Young Kim, J Pierre Colinge - Applied Physics Letters, 2012 - pubs.aip.org
Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation
have been experimentally compared between accumulation mode (AM) p-channel multigate …
have been experimentally compared between accumulation mode (AM) p-channel multigate …
A junctionless silicon carbide transistor for harsh environment applications
Silicon carbide (SiC) is the material of choice for high-temperature, high-voltage, and other
harsh environment applications in high-energy physics, outer space, etc., because of its high …
harsh environment applications in high-energy physics, outer space, etc., because of its high …