Hexagonal boron nitride for next‐generation photonics and electronics

S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

Recommended methods to study resistive switching devices

M Lanza, HSP Wong, E Pop, D Ielmini… - Advanced Electronic …, 2019 - Wiley Online Library
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

Recent advances in structural engineering of 2D hexagonal boron nitride electrocatalysts

M Rafiq, X Hu, Z Ye, A Qayum, H **a, L Hu, F Lu… - Nano Energy, 2022 - Elsevier
Hexagonal boron nitride (h-BN) as a type of two-dimensional (2D) materials has gained
significant attention in green energy applications recently. In the past, h-BN has mainly been …

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

F Palumbo, C Wen, S Lombardo… - Advanced Functional …, 2020 - Wiley Online Library
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Y Shen, K Zhu, Y **ao, D Waldhör, AH Basher… - Nature …, 2024 - nature.com
Abstract Two-dimensional (2D) semiconductors could potentially be used as channel
materials in commercial field-effect transistors. However, the interface between 2D …

Variability and yield in h‐BN‐based memristive circuits: the role of each type of defect

Y Shen, W Zheng, K Zhu, Y **ao, C Wen… - Advanced …, 2021 - Wiley Online Library
In the race of fabricating solid‐state nano/microelectronic devices using 2D layered
materials (LMs), achieving high yield and low device‐to‐device variability are the two main …

Dielectric breakdown of oxide films in electronic devices

A Padovani, P La Torraca, J Strand, L Larcher… - Nature Reviews …, 2024 - nature.com
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

A van der Waals integrated damage‐free memristor based on layered 2D hexagonal boron nitride

JY Mao, S Wu, G Ding, ZP Wang, FS Qian, JQ Yang… - Small, 2022 - Wiley Online Library
Abstract 2D materials with intriguing properties have been widely used in optoelectronics.
However, electronic devices suffered from structural damage due to the ultrathin materials …

High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

KA Messalea, N Syed, A Zavabeti, M Mohiuddin… - ACS …, 2021 - ACS Publications
High dielectric constant (high-k) ultrathin films are required as insulating gate materials. The
well-known high-k dielectrics, including HfO2, ZrO2, and SrTiO3, feature three-dimensional …

Scanning probe microscopy for advanced nanoelectronics

F Hui, M Lanza - Nature electronics, 2019 - nature.com
As the size of electronic devices continues to shrink, characterization methods capable of
precisely probing localized properties become increasingly important. Scanning probe …