[HTML][HTML] Low melting point solders based on Sn, Bi, and In elements

Y Liu, KN Tu - Materials Today Advances, 2020 - Elsevier
In the big data era, Si chips are integrated more and more to satisfy the fast growing demand
from customers. In addition, in the post-COVID-19 virus era, the trend of distance teaching …

Recent advances on kinetic analysis of solder joint reactions in 3D IC packaging technology

KN Tu, Y Liu - Materials Science and Engineering: R: Reports, 2019 - Elsevier
We review five solder joint reactions in 3D IC packaging technology which are of wide
interest:(1) Scallop-type growth of Cu 6 Sn 5 in solid-liquid interdiffusion reaction,(2) Whisker …

Electromigration in three-dimensional integrated circuits

Z Shen, S **g, Y Heng, Y Yao, KN Tu… - Applied Physics Reviews, 2023 - pubs.aip.org
The development of big data and artificial intelligence technology is increasing the need for
electronic devices to become smaller, cheaper, and more energy efficient, while also having …

Effect of Joule heating and current crowding on electromigration in mobile technology

KN Tu, Y Liu, M Li - Applied Physics Reviews, 2017 - pubs.aip.org
In the present era of big data and internet of things, the use of microelectronic products in all
aspects of our life is manifested by the ubiquitous presence of mobile devices as i-phones …

Effect of thermal stress on anisotropic grain growth in nano-twinned and un-twinned copper films

IH Tseng, YT Hsu, J Leu, KN Tu, C Chen - Acta Materialia, 2021 - Elsevier
Oriented and nanotwinned copper (nt-Cu) of 3.8 µm thickness was electroplated on a Si
wafer substrate for thermal stress measurement from room temperature to 400° C by …

[HTML][HTML] Effect of Joule heating on the reliability of microbumps in 3D IC

Y Yao, Y An, J Dong, Y Wang, KN Tu, Y Liu - Journal of Materials Research …, 2024 - Elsevier
Due to the demand for high-performance electronic products, there has been a rapid
development in three-dimensional integrated circuit (3D IC) packaging technology. The 3D …

Scaling effect of interfacial reaction on intermetallic compound formation in Sn/Cu pillar down to 1 μm diameter

Y Liu, YC Chu, KN Tu - Acta Materialia, 2016 - Elsevier
Abstract Different diameter Sn/Cu pillars varying from 30 to 1 μm have been made by focus
ion beam, and the solid state reaction to form Cu 6 Sn 5 in these pillars has been studied. An …

[HTML][HTML] Electromigration failure mechanisms of< 1 1 1>-oriented nanotwinned Cu redistribution lines with polyimide cap**

IH Tseng, PN Hsu, TL Lu, KN Tu, C Chen - Results in Physics, 2021 - Elsevier
Electromigration (EM) mechanisms are well studied in damascene copper lines capped with
inorganic dielectrics. However, EM in Cu redistribution lines (RDLs) capped by organic …

[HTML][HTML] Enhancement of electromigration lifetime of copper lines by eliminating nanoscale grains in highly< 111>-oriented nanotwinned structures

DP Tran, HH Li, IH Tseng, C Chen - Journal of Materials Research and …, 2021 - Elsevier
In this study, we designed and electroplated various regular and nanotwinned copper (nt-
Cu) lines. These Cu lines were then covered with a polyimide (PI) layer and heat-treated to …

A unified model of mean-time-to-failure for electromigration, thermomigration, and stress-migration based on entropy production

KN Tu, AM Gusak - Journal of Applied Physics, 2019 - pubs.aip.org
We have revisited Black's equation of mean-time-to-failure (MTTF) for electromigration from
the viewpoint that in irreversible processes, entropy production is the controlling behavior …