Beyond Cation Disorder: Site Symmetry‐Tuned Optoelectronic Properties of the Ternary Nitride Photoabsorber ZrTaN3

E Sirotti, LI Wagner, CM Jiang… - Advanced Energy …, 2024 - Wiley Online Library
Ternary nitrides are rapidly emerging as promising compounds for optoelectronic and
energy conversion applications, yet comparatively little of this vast composition space has …

Exploring Nitrides: A Promising Alternative Class of Narrow Bandgap Semiconductors

P Pandey, SW Cho, J Kim, DW Kang - Materials Today Energy, 2025 - Elsevier
Nitrides are emerging as a highly promising class of narrow bandgap semiconductors,
recognized for their distinctive electronic and optical properties. Narrow bandgap nitrides …

Structural and optoelectronic properties of thin film

RW Smaha, JS Mangum, IA Leahy, J Calder… - Physical Review …, 2023 - APS
Nitride perovskites are an emerging class of materials that have been predicted to display a
range of interesting physics and functional properties, but they are highly underexplored due …

Predicting band gaps of ABN 3 perovskites: an account from machine learning and first-principle DFT studies

S Ghosh, J Chowdhury - RSC advances, 2024 - pubs.rsc.org
The present paper is primarily focused on predicting the band gaps of nitride perovskites
from machine learning (ML) models. The ML models have been framed from the feature …

Dopant-induced modulation of ferroelectricity in perovskite nitride

HS Deora, A Narayan - Physical Review Materials, 2024 - APS
Perovskite nitrides are starting to be explored for their promising properties distinct from their
oxide counterparts. Here, through first-principles density functional computations, we study …

Structure, electronic and magneto-elastic properties of rare earth nitrides Ln3NIn (Ln= Nd, Pm, Sm, Eu, Gd, Tb) anti-perovskites

FF Alharbi, S Mehmood, Z Ali, SR Khan, M Khan… - Physica B: Condensed …, 2024 - Elsevier
Electronic structure and magneto-elastic characteristics of lanthanide nitrides Ln 3 NIn (Ln=
Nd-Tb) are explored by DFT. The structural reported data are reliable with the experimental …

A single-phase epitaxially grown ferroelectric perovskite nitride

S Choi, Q **, X Zi, D Rong, J Fang, J Zhang… - ar** functional
devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories …

GdWN is a Nitride Perovskite

RW Smaha, JS Mangum, N Yadav, CL Rom… - ar** functional
devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories …