In this work, we investigated the temperature-dependent photodetection behavior of a high-
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …

This work demonstrates five-channel AlGaN/GaN Schottky barrier diodes (SBDs) fabricated
on a 4-inch wafer with a sheet resistance of 115 Ω/sq. A novel edge termination based on …

Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on
InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method …

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-
mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress …

This paper for the first time presents a comprehensive computational modeling approach for
AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different …

In order to assess possible mechanisms of gate reverse-bias leakage current in AlInN/GaN
high electron mobility transistors (HEMTs) grown by metalorganic chemical-vapor deposition …

The scattering mechanisms governing the transport properties of high mobility
AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN …

Record-low sheet-resistance of∼ 128Ω/sq have been obtained in two-dimensional electron
gases at ultrathin single AlN/GaN heterojunctions by optimizing the metal fluxes used in …

Reliability of dielectrics is a critical concern in GaN metal-oxide-semiconductor-
heterojunction-field-effect transistor (MOS-HFET) devices for use in high-voltage power and …

Abstract Metal-polar In 0.17 Al 0.83 N barriers, lattice-matched to GaN, were grown under N-
rich conditions by plasma-assisted molecular beam epitaxy. The compositional homogeneity …