Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

This study investigates bipolar and nonpolar resistive-switching of HfO 2 with various metal
electrodes. Supported by convincing physical and electrical evidence, it is our contention …

Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the
equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author …

To address the issues of poor thermal stability and thermal conductivity in polyurethane (PU)
shell microencapsulated phase change materials (MEPCMs), this study prepared PU/SiO 2 …

The Si/dielectric interface properties influence device performance significantly. Often the
interface is not stable and changes during and/or after the growth. For a better …

Nanolayer stacks are technologically very relevant for current and future applications in
many fields of research. A nondestructive characterization of such systems is often …

Hard X-ray photoelectron spectroscopy was used to examine the interface dipole
modulation of SiO 2/1-monolayer titanium oxide/HfO 2 stack embedded in a metal–insulator …

Abstract Ultrathin films of HfO 2-ZrO 2 system, Hf x Zr 1-x O 2, were fabricated for generating
ferroelectric phase. Polycrystalline Hf x Zr 1-x O 2 films were prepared via chemical solution …

Direct-contact Hf O 2∕ Si interfaces, which have virtually no interfacial Si O 2 layer, exhibit
characteristic interface-charge distribution. The authors report that direct-contact interfaces …

In this study, we found that stable interface dipole modulation (IDM) is possible for HfO 2/1-
monolayer TiO 2/SiO 2 stack structures prepared by using a low temperature annealing …