A novel thiophene-based D-π-A type organic material: Synthesis, characterization and Schottky diode applications
Herein, a newly designed π-conjugated D-π-A type organic material, namely TPA-T-DCV 9,
was synthesized in excellent yield by introducing triphenylamine as electron donor and …
was synthesized in excellent yield by introducing triphenylamine as electron donor and …
Analysis of I–VT characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy
The temperature effect on the electrical characteristics of Au/Ti on Beryllium-doped Al 0.29
Ga 0.71 As Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy has …
Ga 0.71 As Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy has …
Effects of PEDOT: PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode …
In this study, diode applications of Crystal Violet (CV) and PEDOT materials were studied.
The Ni/p-Si/Al, Ni/CV/p-Si/Al and Ni/PEDOT: PSS/CV/p-Si/Al diodes were fabricated. The I–V …
The Ni/p-Si/Al, Ni/CV/p-Si/Al and Ni/PEDOT: PSS/CV/p-Si/Al diodes were fabricated. The I–V …
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
The main electrical characteristics of Cu/n-Si metal-semiconductor structures have been
investigated in the temperature range 50 K to 310 K using current–voltage (I–V) and …
investigated in the temperature range 50 K to 310 K using current–voltage (I–V) and …
Modeling of Schottky diode characteristic by machine learning techniques based on experimental data with wide temperature range
Y Torun, H Doğan - Superlattices and Microstructures, 2021 - Elsevier
In this study, 4 common machine learning methods have been used to model the I–V
characteristic of the Au/Ni/n-GaN/undoped GaN Schottky diode. The current values of …
characteristic of the Au/Ni/n-GaN/undoped GaN Schottky diode. The current values of …
Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN pin Solar Cell
Basic knowledge about the factors and mechanisms affecting the performance of solar cells
and their identification is essential when thinking of future improvements to the device …
and their identification is essential when thinking of future improvements to the device …
Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole–MWCNT composite/TiO2/Al2O3/n-Si structure
A Ashery, AEH Gaballah… - Materials Research …, 2021 - iopscience.iop.org
The paper presents a new approach based on the appearance of negative capacitance
(NC) at high and low frequencies; previously, researchers agreed that NC only occurred at …
(NC) at high and low frequencies; previously, researchers agreed that NC only occurred at …
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
A model to predict the ideal reverse leakage currents in Schottky barrier diodes, namely,
thermionic emission and tunneling components, has been developed and tested by means …
thermionic emission and tunneling components, has been developed and tested by means …
Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures
Abstract We prepared the Au/Ti/Al2O3/n-GaAs MIS (metal/insulating/semiconductor)
structures with and without Al2O3 interfacial layer. The diode D1 has the interfacial layer …
structures with and without Al2O3 interfacial layer. The diode D1 has the interfacial layer …
Theoretical electronic and optical properties of AlGaAsN/GaAs quantum well using 10 band kp approach
Based upon the 10-band kp approach, the electronic properties, namely the electronic band
structure, effective mass, band offset, their ratio, and optical gain of AlGaAsN/GaAs, have …
structure, effective mass, band offset, their ratio, and optical gain of AlGaAsN/GaAs, have …