Radiation effects in a post-Moore world
DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …
effects on microelectronics, focusing on historical trends and future needs. A number of …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
TID degradation mechanisms in 16-nm bulk FinFETs irradiated to ultrahigh doses
T Ma, S Bonaldo, S Mattiazzo… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
Abstract Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
Total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2/Al
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses
and then annealed at high temperature under different bias conditions. The experimental …
and then annealed at high temperature under different bias conditions. The experimental …
Radiation-induced charge trap** in shallow trench isolations of FinFETs
We provide comprehensive experimental data and technology computer-aided design
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …