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MOSFET with super-steep retrograded island
The present invention comprises a method for forming a semiconducting device including
the steps of providing a layered structure including a substrate, a low diffusivity layer of a first …
the steps of providing a layered structure including a substrate, a low diffusivity layer of a first …
Methods of forming strained-semiconductor-on-insulator finFET device structures
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Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
(65) Prior Publication Data(Continued) US 2011 FOO49568 A1 Mar. 3, 2011 OTHER
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Hybrid fin field-effect transistor structures and related methods
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Tri-gate field-effect transistors formed by aspect ratio trap**
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Semiconductor structures include a trench formed proximate a substrate including a first
semiconductor material. A crystalline material including a second semiconductor material …
semiconductor material. A crystalline material including a second semiconductor material …
CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
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(57) ABSTRACT A CMOS inverter having a heterostructure including a Si Substrate, a
relaxed SiGe layer on the Si Substrate, and a Strained Surface layer on said relaxed SiGe …
relaxed SiGe layer on the Si Substrate, and a Strained Surface layer on said relaxed SiGe …
Defect reduction using aspect ratio trap**
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Semiconductor sensor structures with reduced dislocation defect densities
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5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 5,269,852 5,269,876 …