Presenting an up-to-date report on electronic glasses, this book examines experiments and
theories for a variety of disordered materials where electrons exhibit glassy properties …

The anomalous Hall conductivity has an important extrinsic contribution known as the side
jump contribution, which is independent of both scattering strength and disorder density …

FeSi is known as a narrow-gap semiconductor showing peculiar temperature dependence
of transport properties, which evoked debate for over 50 years. In this study, it is shown that …

Simultaneous fits to the reported experimental data of the temperature dependence of the
electrical conductivity, the Seebeck coefficient, and the Hall coefficient on three samples of …

We present a detailed study of the emergence of bulk ferromagnetism in low-carrier-density
samples of undoped indium tin oxide. We use annealing to increase the density of oxygen …

Anomalous Hall effect (AHE) and ordinary Hall effect (OHE) in variable range hop**
regime of ferromagnetic semiconductor are important for understanding the localized …

Molecular-beam epitaxy grown, 5 nm thick annealed Ga 0.95 Mn 0.05 As films demonstrate
transition from metallic to insulating state for sheet resistances near resistance quantum …

The various competing contributions to the anomalous Hall effect in spin-polarized two-
dimensional electron gases in the presence of both intrinsic, extrinsic and external electric …

Standard differential torque magnetometry is a technique for measuring magnetic anisotropy
by placing a sample on the end of a diving-board-like cantilever and tracking the cantilever's …

Anomalous Hall effect (AHE) is important for understanding the topological properties of
electronic states, and provides insight into the spin-polarized carriers of magnetic materials …