Dynamical memristors for higher-complexity neuromorphic computing

S Kumar, X Wang, JP Strachan, Y Yang… - Nature Reviews …, 2022 - nature.com
Research on electronic devices and materials is currently driven by both the slowing down
of transistor scaling and the exponential growth of computing needs, which make present …

Volatile and nonvolatile memristive devices for neuromorphic computing

G Zhou, Z Wang, B Sun, F Zhou, L Sun… - Advanced Electronic …, 2022 - Wiley Online Library
Ion migration as well as electron transfer and coupling in resistive switching materials
endow memristors with a physically tunable conductance to resemble synapses, neurons …

Curved neuromorphic image sensor array using a MoS2-organic heterostructure inspired by the human visual recognition system

C Choi, J Leem, M Kim, A Taqieddin, C Cho… - Nature …, 2020 - nature.com
Conventional imaging and recognition systems require an extensive amount of data storage,
pre-processing, and chip-to-chip communications as well as aberration-proof light focusing …

[HTML][HTML] Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application

Z Shen, C Zhao, Y Qi, W Xu, Y Liu, IZ Mitrovic, L Yang… - Nanomaterials, 2020 - mdpi.com
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

Vertical organic synapse expandable to 3D crossbar array

Y Choi, S Oh, C Qian, JH Park, JH Cho - Nature communications, 2020 - nature.com
Recently, three-terminal synaptic devices have attracted considerable attention owing to
their nondestructive weight-update behavior, which is attributed to the completely separated …

The gate injection-based field-effect synapse transistor with linear conductance update for online training

S Seo, B Kim, D Kim, S Park, TR Kim, J Park… - Nature …, 2022 - nature.com
Neuromorphic computing, an alternative for von Neumann architecture, requires synapse
devices where the data can be stored and computed in the same place. The three-terminal …

Ferroelectric tunneling junctions based on aluminum oxide/zirconium-doped hafnium oxide for neuromorphic computing

H Ryu, H Wu, F Rao, W Zhu - Scientific reports, 2019 - nature.com
Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are
promising for many emerging applications, including non-volatile memories and …

Neural-inspired artificial synapses based on low-voltage operated organic electrochemical transistors

R Bhunia, EK Boahen, DJ Kim, H Oh, Z Kong… - Journal of Materials …, 2023 - pubs.rsc.org
Artificial synaptic devices that emulate the neural functionalities of the human brain have
received research attention owing to their inherent ability to build brain-like computing …

Variability-aware modeling of filamentary oxide-based bipolar resistive switching cells using SPICE level compact models

C Bengel, A Siemon, F Cüppers… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Bipolar resistive switching (BRS) cells based on the valence change mechanism show great
potential to enable the design of future non-volatile memory, logic and neuromorphic circuits …

Filament‐free bulk resistive memory enables deterministic analogue switching

Y Li, EJ Fuller, JD Sugar, S Yoo, DS Ashby… - Advanced …, 2020 - Wiley Online Library
Digital computing is nearing its physical limits as computing needs and energy consumption
rapidly increase. Analogue‐memory‐based neuromorphic computing can be orders of …