Influence of annealing conditions on the mechanical and microstructural behavior of electroplated Cu-TSV

C Okoro, K Vanstreels, R Labie, O Lühn… - Journal of …, 2010 - iopscience.iop.org
In this paper, the effect of annealing condition on the microstructural and mechanical
behavior of copper through-silicon via (Cu-TSV) is studied. The hardness of Cu-TSV scaled …

Liquid‐phase deposition of freestanding copper foils and supported copper thin films and their structuring into conducting line patterns

N Kränzlin, S Ellenbroek, D Durán‐Martín… - Angewandte Chemie …, 2012 - infona.pl
Liquid‐Phase Deposition of Freestanding Copper Foils and Supported Copper Thin Films and
Their Structuring into Conducting Line Patterns × Close The Infona portal uses cookies, ie …

Effect of downscaling nano-copper interconnects on the microstructure revealed by high resolution TEM-orientation-map**

KJ Ganesh, AD Darbal, S Rajasekhara… - …, 2012 - iopscience.iop.org
In this work, a recently developed electron diffraction technique called diffraction scanning
transmission electron microscopy (D-STEM) is coupled with precession electron microscopy …

Evolution of microstructure and texture during deformation and recrystallization of heavily rolled Cu-Cu multilayer

KS Suresh, AD Rollett, S Suwas - Metallurgical and Materials Transactions …, 2013 - Springer
A Cu-Cu multilayer processed by accumulative roll bonding was deformed to large strains
and further annealed. The texture of the deformed Cu-Cu multilayer differs from the …

Characterization of local strain/stress in copper through-silicon via structures using synchrotron x-ray microdiffraction, electron backscattered diffraction and nonlinear …

M Song, KR Mundboth, JA Szpunar… - Journal of …, 2015 - iopscience.iop.org
In this study, the thermomechanical characteristics of copper through-silicon via (Cu TSV)
structures were studied using synchrotron x-ray microdiffraction, electron backscattered …

Stress-induced grain boundary migration in polycrystalline copper

MO Bloomfield, DN Bentz, TS Cale - Journal of electronic materials, 2008 - Springer
We use three-dimensional (3D) grain-continuum models to study grain boundary migration,
treating each grain with anisotropic elastic properties. Grain boundary speeds are computed …

Thermomechanical characteristics of copper through-silicon via structures

M Song, L Chen, JA Szpunar - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
The 3-D integrated circuit technologies with through-silicon via (TSV) structure have been
attracting increasing attentions due to enhanced microchip function and performance …

Routing and reliability

T Gupta, T Gupta - Copper Interconnect Technology, 2009 - Springer
Increased complexity and functionality in semiconductor devices have placed a greater
emphasis on interconnect routing, where RC (R is resistance and C is capacitance) delay …

Growth of High-Quality Centimeter-Size Single-Crystal Graphene on High-Temperature Annealed Cu (111) Substrate.

QI Jianhai, C Yang, YUE Yuanyuan… - Journal of Synthetic …, 2023 - search.ebscohost.com
Abstract Two-dimensional (2D) graphene has shown great potential of breakthrough of
Moore's law limitation due to its atomic thickness in electronic devices. Up to now, chemical …

Tunable copper microstructures in blanket films and trenches using pulsed electrodeposition

J Marro - 2016 - search.proquest.com
Copper interconnects in microelectronics have long been plagued with thermo-mechanical
reliability issues. Control over the copper deposition process and resulting microstructure …